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so-8 top view 8 1 2 3 4 5 6 7 d d d d g s a s s a hexfet power mosfet notes through are on page 9
v ds 80 v r ds(on) max (@v gs = 10v) 15 m q g (typical) 35 nc i d (@t a = 25c) 9.3 a absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation p d @t a = 70c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r jl junction-to-lead ??? 20 c/w r ja junction-to-ambient ??? 50 80 7.4 -55 to +150 2.5 0.02 1.6 v w a c max. 9.3 74 20 features benefits industry-standard pinout so-8 package ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability form quantity tube/bulk 95 IRF7493PBF-1 tape and reel 4000 irf7493trpbf-1 package type standard pack orderable part number IRF7493PBF-1 so-8 base part number

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static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 80 ??? ??? v ? . 0.0 ( 11. 1 ( .0 .0 0 a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 200 na gate-to-source reverse leakage ??? ??? -200 dynamic @ t j = 25c (unless otherwise specified) gfs forward transconductance 13 ??? ??? s q g total gate charge ??? 35 53 q gs gate-to-source charge ??? 5.7 ??? q gd gate-to-drain charge ??? 12 ??? t d(on) turn-on delay time ??? 8.3 ??? t r rise time ??? 7.5 ??? t d(off) turn-off delay time ??? 30 ??? ns t f fall time ??? 12 ??? c iss input capacitance ??? 1510 ??? c oss output capacitance ??? 320 ??? pf c rss reverse transfer capacitance ??? 130 ??? c oss output capacitance ??? 1130 ??? c oss output capacitance ??? 210 ??? c rss eff. effective output capacitance ??? 320 ??? avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 9.3 (body diode) a i sm pulsed source current ??? ??? 74 (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 37 56 ns q rr reverse recovery charge ??? 52 78 nc r g = 6.2 conditions v gs = 10v max. 180 5.6 v gs = 0v, v ds = 0v to 64v conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 5.6a t j = 25c, i f = 5.6a, v dd = 15v di/dt = 100a/ s t j = 25c, i s = 5.6a, v gs = 0v showing the integral reverse p-n junction diode. typ. ??? ??? v gs = 10v v gs = 0v v ds = 25v v gs = 0v, v ds = 1.0v, ? = 1.0mhz v gs = 0v, v ds = 64v, ? = 1.0mhz v dd = 40v, i d = 5.6a mosfet symbol v ds = v gs , i d = 250 a v ds = 80v, v gs = 0v v ds = 64v, v gs = 0v, t j = 125c ? = 1.0mhz v ds = 15v, i d = 5.6a v ds = 40v v gs = 20v v gs = -20v i d = 5.6a

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fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 3.5v 20 s pulse width tj = 25c 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 3.5v 20 s pulse width tj = 150c "

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3.0 4.0 5.0 6.0 v gs , gate-to-source voltage (v) 0.10 1.00 10.00 100.00 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 25v 20 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 9.3a v gs = 10v

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fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 102030405060 q g total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 64v vds= 40v vds= 16v i d = 5.6a 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-todrain voltage (v) 0.1 1.0 10.0 100.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec
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fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms " 1 !" 0.1 % " $% " + - " fig 9. maximum drain current vs. ambient temperature 25 50 75 100 125 150 t c , case temperature (c) 0 2 4 6 8 10 i d , d r a i n c u r r e n t ( a ) 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response )
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fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 14a&b. basic gate charge test circuit and waveform fig 15a&b. unclamped inductive test circuit and waveforms fig 15c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v 4.0 8.0 12.0 16.0 v gs, gate -to -source voltage (v) 0.010 0.020 0.030 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) i d = 5.6a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) # $ $ %$ 0 20406080 i d , drain current (a) 0.011 0.012 0.013 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) v gs = 10v
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fig 16.

for n-channel hexfet power mosfets &" '!&!("!( ? '!)"*( ( ? "!(( ? '!)'+,*( ( &""("(-!"." p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period " (#"
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* )++ + - + + + - - - " ? /0 !("!12 ? "/".3 4 ? * !("!1 !"55 ? 4 6/ 4(" fig 17. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr
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so-8 package outline (mosfet & fetky) e1 d e y b a a1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 b asic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches mi n max dim 8 e c .0075 .0098 0.19 0.25 .025 bas ic 0.635 b as ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 8x 1.78 [ .070 ] 4 . ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012aa. not e s : 1. dimens ioning & t ole rancing pe r as me y14.5m-1994. 2. controlling dimension: millimeter 3. dimens ions are s hown in mil l imet e rs [inche s ]. 5 dimens ion doe s not incl ude mol d prot rus ions . 6 dimens ion doe s not incl ude mol d prot rus ions . mold prot rus ions not t o e xce e d 0.25 [.010]. 7 dimens ion is t he l engt h of l ead f or s ol de ring t o a s ubs t rat e. mold prot rus ions not t o e xce e d 0.15 [.006]. dimensions are shown in milimeters (inches) so-8 part marking information p = disgnates lead - free example: this is an irf7101 (mos fet ) f 7101 xxxx international logo rect ifier part number lot code product (optional) dat e code (yww) y = last digit of the year ww = we e k a = as s e mb l y s i t e cod e note: for the most current drawing please refer to ir website at: http://www.irf.com/package/
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repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 12mh, r g = 25 , i as = 5.6a. pulse width 300 s; duty cycle 2%. when mounted on 1 inch square copper board c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss.
330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel (dimensions are shown in millimeters (inches) note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ms l 1 (per je de c j-s t d-020d ?? ) rohs c ompliant yes qualification information ? qualification level industrial (per jedec jesd47f ?? guidelines) moisture sensitivity level so-8 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/

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